MANUFACTURE OF SILICON WAFER - MITSUBISHI MATERIALS CORP

Title:

MANUFACTURE OF SILICON WAFER

Document Type and Number:

Japanese Patent JPH065611

Kind Code:

A

Abstract:

PURPOSE: To provide a silicon wafer manufacturing method by which a completely mirror-faced IG silicon wafer can be obtained.

CONSTITUTION: A silicon single crystal rod, which is pulled up by CZ method, is sliced (S11) into wafers of 650μm in thickness, for example. After a chamfering process has been conducted on these silicon wafers, for example, the silicon wafers are lapped (S12) to remove the strain caused by machining. After the distortion by lapping has been removed by etching (S13), the silicon wafers are washed (S14) and the etching solution is removed completely. At this point, an IG heat treatment is conducted on the silicon wafers by a known method (S15). After the heat treatment, mirror face is obtained on the IG wafer by polishing (S16). Further, after washing (S17), the wafers are sent to the next device process (S18).

Inventors:

HORIOKA YUKICHI
SUZUKI ISAMU

Application Number:

JP18171692A

Publication Date:

January 14, 1994

Filing Date:

June 16, 1992

Export Citation:

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Assignee:

MITSUBISHI MATERIALS CORP
MITSUBISHI MATERIAL SILICON

International Classes:

H01L21/322; (IPC1-7): H01L21/322

Domestic Patent References:

JPH02284427A

1990-11-21

Attorney, Agent or Firm:

Seiichi Kuwai (1 person outside)

Next Patent: MANUFACTURE OF SEMICONDUCTOR DEVICE