Title:
フィールドリミッティングリング構成を有するＸ線センサ
Document Type and Number:
Japanese Patent JP7271724
Kind Code:
B2
Abstract:
Disclosed is an X-ray sensor having an active detector region including detector diodes on its surface. The X-ray sensor further includes a junction termination surrounding the surface region including the detector diodes. The junction termination includes a guard arranged closest to the end of the surface region, a field stop outside the guard and at least two field limiting rings, FLRs arranged between the guard and the field stop. A first FLR is arranged at a distance Δ1 from the guard selected from the interval [4 μm; 12 μm], a second FLR is arranged at a distance Δ2 from the first FLR selected from the interval [6.5 μm; 14 μm], and wherein the distance Δ2 is larger than the distance Δ1. The proposed technology also provides a method for constructing such an X-ray sensor and an X-ray imaging system including an X-ray detector system that includes such X-ray sensor.
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Inventors:
Meitec, Bakowski, Holtlead
Mats, Danielson
Chen, Shu
Mats, Danielson
Chen, Shu
Application Number:
JP2021567898A
Publication Date:
May 11, 2023
Filing Date:
May 14, 2019
Export Citation:
Assignee:
PRISMATIC SENSORS AB
International Classes:
G01T1/24; A61B6/03
Domestic Patent References:
| JP2000323741A |
Other References:
VIJAY MISHRA et al.,Role of guard rings in improving the performance of silicon detectors,Indian Academy of Sciences,ドイツ,Springer,2005年08月01日,Vol. 65, No. 2,pp. 259-272
R. Bradford,N-IN-N SENSOR GEOMETRY,slideplayer.com,2016年02月03日,https://slideplayer.com/slide/10548127/
B. F. Phlips, et al.,Development of Thick Intrinsic Silicon Detectors for Hard X-ray and Gamma-ray Detection,2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310),米国,IEEE,2002年08月07日,pp. 207-211
Kyung-Wook Shin, et al.,Optimizing floating guard ring designs for FASPAX N-in-P silicon sensors,arXiv,米国,Cornell University,2016年09月13日,arXiv:1609.04044v1,pp. 1-8
R. Bradford,N-IN-N SENSOR GEOMETRY,slideplayer.com,2016年02月03日,https://slideplayer.com/slide/10548127/
B. F. Phlips, et al.,Development of Thick Intrinsic Silicon Detectors for Hard X-ray and Gamma-ray Detection,2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310),米国,IEEE,2002年08月07日,pp. 207-211
Kyung-Wook Shin, et al.,Optimizing floating guard ring designs for FASPAX N-in-P silicon sensors,arXiv,米国,Cornell University,2016年09月13日,arXiv:1609.04044v1,pp. 1-8
Attorney, Agent or Firm:
Hiroshi Ogura