Title:
ZnOシード層、ZnOウィスカーパターン及びそれらの作製方法
Document Type and Number:
Japanese Patent JP5540365
Kind Code:
B2
Inventors:
Hu Shu Run
Yoshitake Masuda
Kazumi Kato
Yoshitake Masuda
Kazumi Kato
Application Number:
JP2008005051A
Publication Date:
July 02, 2014
Filing Date:
January 11, 2008
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
International Classes:
C30B29/62; B82B1/00; B82B3/00; C01G9/02; H01B5/14; H01B13/00; H01M14/00
Domestic Patent References:
| JP6230216A |
Other References:
Sung-Hak Yi, etc.,Low-temperature growth of ZnO nanorods by chemical bath deposition,Journal of Colloid and Interface Science,2007年 6月13日,313(2007),705-710
Yoshitake Masuda etc.,Site-Selective Deposition and Morphology Control of UV- and Visible-Light-Emitting Zno Crystals,CRYSTAL GROWTH & DESIGN,米国,2005年 6月27日,2006 Vol.6, No.1,75-78
Yoshitake Masuda etc.,Site-Selective Deposition and Morphology Control of UV- and Visible-Light-Emitting Zno Crystals,CRYSTAL GROWTH & DESIGN,米国,2005年 6月27日,2006 Vol.6, No.1,75-78
Attorney, Agent or Firm:
Masahiko Sudo
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