Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3193332
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To dehydrogenate a semiconductor layer uniformly and thoroughly by providing a step for forming the semiconductor layer on a substrate, and a step for dehydrogenating the semiconductor layer through irradiation with infrared light.
SOLUTION: A plasma CVD system 2 for depositing an amorphous silicon, a thermal annealing furnace 3 for dehydrogenation, a laser crystallization chamber 4, a sample carry-in chamber 1 and a sample carry-out chamber 5 are arranged in series. The chamber 3 is a thermal annealing furnace for dehydrogenation but an infrared lamp heater is used for heating. The chamber 4 is a laser annealing chamber where irradiation with laser light is performed through a quartz window provided at the upper part of the chamber using an external laser generator and an optical system. A laser beam is matched with the width of a substrate using the optical system and a sample is carried slowly using a rectangular beam extending perpendicularly to the carrying direction of substrate while fixing the laser system.
Inventors:
Hongyong Zhang
Naoto Kusumoto
Naoto Kusumoto
Application Number:
JP30985197A
Publication Date:
July 30, 2001
Filing Date:
October 24, 1997
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L21/336; H01L29/786; (IPC1-7): H01L21/20; H01L21/336; H01L29/786
Domestic Patent References:
| JP60105216A | ||||
| JP6476715A |
Attorney, Agent or Firm:
Takashi Shibuya