Title:
MANUFACTURE OF E/D TYPE FIELD EFFECT SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3044396
Kind Code:
B2
Abstract:
PURPOSE: To realize an E/D type field effect semiconductor device possessing a gate of high breakdown strength by a method wherein an etching-resistant mask layer provided with openings for forming a Schottky gate on an E-type region and a D-type region respectively is formed, and a Schottky gate is formed on the E-type region and the D-type region respectively using the openings.
CONSTITUTION: N-GaAs layers 34, 36, and 36 and N-AlGaAs layers 33, 35, and 37 are alternately grown on I-type Gaps layer 31 provided onto a semiconductor substrate. An SiO2 layer 39 provided with openings used for forming a Schottky gate in an E-type region and a D-type region respectively is formed thereon. The uppermost semiconductor active layer 38 of the E-type region is etched through the openings provided in the mask 39, and then the second semiconductor active layer 36 of the E-type region and the uppermost semiconductor active layer 37 of the D-type region are etched through the two openings provided in the mask 39. Semiconductor active layers different in depth at the E-type and the D-type region are exposed, and Schottky gates 54 and 55 are formed on the exposed semiconductor active layers 33 and 34 respectively.
Inventors:
Masahisa Suzuki
Application Number:
JP1237491A
Publication Date:
May 22, 2000
Filing Date:
January 10, 1991
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L27/088; H01L21/06; H01L21/338; H01L21/8232; H01L21/8236; H01L27/06; H01L27/095; H01L29/04; H01L29/778; H01L29/812; (IPC1-7): H01L29/778; H01L21/06; H01L21/338; H01L21/8232; H01L27/095; H01L29/812
Domestic Patent References:
| JP2101751A | ||||
| JP2105427A | ||||
| JP6124265A | ||||
| JP294623A |
Attorney, Agent or Firm:
Shoji Kashiwaya (1 person outside)