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Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE AND MANAGING METHOD OF ITS MANUFACTURING PROCESS
Document Type and Number:
Japanese Patent JPH0745603
Kind Code:
A
Abstract:

PURPOSE: To control, with high reproducibility, the quality of an oxide film which is formed on a semiconductor substrate.

CONSTITUTION: In a method for manufacturing a semiconductor device in a clean room, the relative humidity in the clean room is kept lower than or equal to 50%. In a method which manages a process for manufacturing the semiconductor device in the clean room, a semiconductor substrate having MOS structure is formed in the clean room, the change of capacitance characteristics of the semiconductor substrate is measured, and the relative humidity in the clean room is regulated on the basis of the measurement results. The capacitance characteristics are capacitance-voltage characteristics (C-V characteristics) and/or time response characteristics (C-t characteristics) of a capacitor.


Inventors:
FUJIMAKI NOBUYOSHI
Application Number:
JP20470293A
Publication Date:
February 14, 1995
Filing Date:
July 27, 1993
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK
International Classes:
H01L21/02; H01L21/316; H01L21/66; (IPC1-7): H01L21/316; H01L21/02; H01L21/66
Domestic Patent References:
JPH0257844A1990-02-27
JPH03183132A1991-08-09
JPH04254328A1992-09-09
JPH05109766A1993-04-30
JPS62174923A1987-07-31
JPH04355921A1992-12-09
JPH03129735A1991-06-03
Attorney, Agent or Firm:
Kunio Shinami (1 person outside)



 
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