Title:
ＥＵＶリソグラフィのためのアシスト層
Document Type and Number:
Japanese Patent JP6592243
Kind Code:
B2
Abstract:
The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.
Inventors:
Uwatara Tantiboro
Washburn carlton
Krishna Mercy Bandana
Guerrero Douglas
Colin Aline
Washburn carlton
Krishna Mercy Bandana
Guerrero Douglas
Colin Aline
Application Number:
JP2014542572A
Publication Date:
October 16, 2019
Filing Date:
November 20, 2012
Export Citation:
Assignee:
Brewer Science INC.
International Classes:
H01L21/027; C08G77/14; C08G79/00; G03F7/11; G03F7/26
Domestic Patent References:
| JP2010085893A | ||||
| JP2011164345A | ||||
| JP2011191741A |
Foreign References:
| WO2010080789A1 | ||||
| WO2008044741A1 |
Attorney, Agent or Firm:
Haruko Sanwa
Hideaki Ito
Hideaki Ito