APPARATUS FOR GROWING ATOMIC LAYER AND EXHAUST PART THEREOF

Title:

APPARATUS FOR GROWING ATOMIC LAYER AND EXHAUST PART THEREOF

Document Type and Number:

Japanese Patent JP2017089009

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To reduce the frequency of cleaning on the exhaust side to improve maintenance workability.SOLUTION: An apparatus for growing an atomic layer, capable of forming a thin film on a substrate comprises: a film deposition vessel; a stage positioned in a film deposition vessel and for holding the substrate; an electrode positioned above the stage and connected with a high frequency power supply; a gas introduction part formed in the film deposition vessel and for supplying a raw material gas into the film deposition vessel; and an exhaust part formed in the film deposition vessel and for exhausting the raw material gas from the film deposition vessel. An adhesion preventing material is attached so as to cover the inner wall of the film deposition vessel having the exhaust part, and inert gas can be passed through a space between the inner wall of the film deposition vessel and the adhesion preventing material.SELECTED DRAWING: Figure 2

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Inventors:

MATSUMOTO TATSUYA
WASHIO YOSHIAKI

Application Number:

JP2016230798A

Publication Date:

May 25, 2017

Filing Date:

November 29, 2016

Export Citation:

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