Title:
基板を処理するための急熱処理用バレル型リアクタ
Document Type and Number:
Japanese Patent JP4171074
Kind Code:
B2
Abstract:
A novel rapid thermal process (RTP) barrel reactor processes a larger batch of semiconductor substrates than was previously possible. The RTP barrel reactor is characterized by a short process cycle time in comparison to the same process cycle time in a conventional CVD barrel reactor. A rapid heat-up of the substrates is one of the keys to the shorter process cycle times of the RTP barrel reactor. The RTP barrel reactor utilizes a radiant heat source in combination with a heat controller that includes an open-loop controller for heat-up and a closed-loop controller for deposition as well as a new energy stabilizer to achieve heating a larger energy stabilizer and volume to a uniform processing temperature in times characteristic of RTP reactors.
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Inventors:
Moore, Gary M
Application Number:
JP53668098A
Publication Date:
October 22, 2008
Filing Date:
February 20, 1998
Export Citation:
Assignee:
Moore Epitaxial, Inc.
International Classes:
C23C16/46; H01L21/205; C23C16/48; C30B25/10; C30B31/12; F27B5/14; F27B5/18; F27D19/00; H01L21/22; H01L21/26
Domestic Patent References:
| JP4183868A | ||||
| JP7078772A | ||||
| JP62058617A | ||||
| JP4503736B2 |
Attorney, Agent or Firm:
Yoichi Oshima