Title:
ビーム均一性測定システム及びその均一性検出方法
Document Type and Number:
Japanese Patent JP5168532
Kind Code:
B2
Abstract:
The present invention facilitates semiconductor device fabrication by monitoring uniformity of beam current and angle of incidence at various locations throughout an ion beam (e.g., a wider portion of a ribbon beam). One or more uniformity detectors are employed within an ion implantation system (e.g., single wafer based system and/or a multiple wafer based system) and are comprised of a number of elements. The respective elements comprise an aperture that selectively obtains a beamlet from an incident ion beam and a pair of sensors that measure beam current as a function of the incoming angle of the ion beam. The angle of incidence at for particular elements can be determined at least partially from the measured beam current by the pairs of sensors. As a result, generation of an ion beam can be adjusted to improve uniformity as indicated and ion implantation can be performed with an improved uniformity and under tighter process controls.
Inventors:
Ben Benis Victor
Application Number:
JP2006513439A
Publication Date:
March 21, 2013
Filing Date:
April 29, 2004
Export Citation:
Assignee:
Axcelis Technologies, Inc.
International Classes:
H01J37/04; H01J3/00; H01J37/304; H01J37/317; H01L21/265
Domestic Patent References:
| JP7036348U | ||||
| JP1183044A | ||||
| JP3017949A | ||||
| JP2033843A | ||||
| JP2288142A | ||||
| JP7073844A | ||||
| JP5217542A | ||||
| JP6342639A |
Attorney, Agent or Firm:
Calyx
Miyazaki Yoshio
Kaoru Onozuka
Akio Tagami
High Masahiro
Toshio Nakamura
Tsutomu Kato
Yusuke Murakoshi
Tomoaki Komiya
Miyazaki Yoshio
Kaoru Onozuka
Akio Tagami
High Masahiro
Toshio Nakamura
Tsutomu Kato
Yusuke Murakoshi
Tomoaki Komiya