Title:
シリコンからのホウ素除去方法
Document Type and Number:
Japanese Patent JP4766837
Kind Code:
B2
Abstract:
The present invention provides a method for removal of boron from metal silicon inexpensively and extremely efficiently by a simple method, specifically, heating metal silicon containing boron as an impurity to its melting point to 2200°C to place it in a molten state, then adding a solid mainly comprised of silicon dioxide and a solid mainly comprised of one or both of a carbonate of an alkali metal or a hydrate of a carbonate of an alkali metal into said molten silicon so as to form a slag and remove the boron in the silicon.
Inventors:
Jiro Kondo
Kensuke Okazawa
Kensuke Okazawa
Application Number:
JP2004059156A
Publication Date:
September 07, 2011
Filing Date:
March 03, 2004
Export Citation:
Assignee:
Nippon Steel Materials Co., Ltd.
International Classes:
C01B33/037
Domestic Patent References:
| JP58130114A | ||||
| JP2003012317A | ||||
| JP55067519A | ||||
| JP2851257B2 | ||||
| JP2001355015A | ||||
| JP2001353561A |
Foreign References:
| WO2003066523A1 |
Attorney, Agent or Firm:
Mikio Hatta
Yasuo Nara
Ken Fujita
Yasuo Nara
Ken Fujita