Title:
【発明の名称】電圧降下の小さい極性反転保護手段を有するブリッジ回路
Document Type and Number:
Japanese Patent JP3006845
Kind Code:
B2
Abstract:
The additional voltage drop across a guard diode against supply polarity inversion in an integrated bridge circuit for driving an external load and employing two high-side NPN power switches driven by two PNP transistors, all monolithically integrated using a junction-type isolation technique, is substantially eliminated by connecting the emitters of the two PNP drive transistors directly to the positive rail, i.e. to the anode of the guard diode. Integrated PNP transistors are per se intrinsically protected against polarity inversion and when so connected permit to reduce the overall voltage drop across the driving bridge circuit. Using a Zener diode as the guard diode and a second Zener diode connected in opposition to the first Zener between the cathode thereof and the negative supply rail an additional spike protection of the circuit's components is implemented.
Inventors:
Sandro struti
Bruno Murari
Franco Conciglieri
Bruno Murari
Franco Conciglieri
Application Number:
JP6953290A
Publication Date:
February 07, 2000
Filing Date:
March 19, 1990
Export Citation:
Assignee:
Esse Esse-Thomson Microelectronics Esse Elle Elle
International Classes:
H01L21/8222; H02H11/00; H01L27/06; H02P7/00; H02H9/04; (IPC1-7): H01L21/8222; H01L27/06
Domestic Patent References:
| JP5922363A | ||||
| JP5092664A | ||||
| JP56145860U |
Attorney, Agent or Firm:
Shogo Ohtake