Title:
【発明の名称】透明導電膜および光電変換半導体装置の製造方法
Document Type and Number:
Japanese Patent JP3061342
Kind Code:
B2
Abstract:
PURPOSE:To provide a method for depositing a low resistance transparent conductive film of ZnO by doping a ZnO film having reduced crystal defect with impurities and a method for fabricating a photoelectric conversion semiconductor device employing it. CONSTITUTION:When a ZnO film is deposited using a molecular beam of ZnO or molecular beams of Zn and O, the ZnO film is doped with impurities using a molecular beam of atoms of group IA(H), group IIIA(B, Al, Ga, In) or group VIIAF, Cl, I, Br) thus lowering the electric resistance with high controllability.
Inventors:
Shigemi Kobiki
Takahiro Wada
Takahiro Wada
Application Number:
JP24666693A
Publication Date:
July 10, 2000
Filing Date:
October 01, 1993
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
C01G9/02; C23C14/08; H01B5/14; H01B13/00; H01L31/04; (IPC1-7): H01L31/04; C01G9/02; C23C14/08; H01B5/14; H01B13/00
Domestic Patent References:
| JP5110125A | ||||
| JP590620A | ||||
| JP3268335A | ||||
| JP2202068A |
Attorney, Agent or Firm:
Kazuo Ishii