Title:
COATING MATERIAL HAVING CHEMICAL SUITABILITY FOR PERFORMANCE OF PARTICLE ON WAFER OF ADVANCED DEVICE
Document Type and Number:
Japanese Patent JP2018076600
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a chamber material having plasma resistance and obtained by a method capable of subjecting an etched dielectric component to ceramic coating.SOLUTION: A processing chamber article includes at least one body of Al, AlOand SiC and a ceramic coating on the body in order to manufacture a coating for a semiconductor processing chamber article. The ceramic coating includes a compound including YOof approximately 50 to approximately 75 mol%, ZrOof approximately 10 to approximately 30 mol% and AlOof approximately 10 to approximately 30 mol%. The number of nodules per inch is approximately 30 to approximately 45; a porosity is approximately 2.5 to approximately 3.2%; and the roughness of the ceramic coating is, preferably, approximately 220 to approximately 250 μinch.SELECTED DRAWING: Figure 4
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Inventors:
JENNIFER Y SUN
BIRAJA PRASAD KANUNG
LUBOMIRSKY DMITRY
BIRAJA PRASAD KANUNG
LUBOMIRSKY DMITRY
Application Number:
JP2018001685A
Publication Date:
May 17, 2018
Filing Date:
January 10, 2018
Export Citation:
Assignee:
APPLIED MATERIALS INC
International Classes:
C23C4/11; H01L21/3065
Domestic Patent References:
| JP2009068066A | 2009-04-02 | |||
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Foreign References:
| US20120135155A1 | 2012-05-31 |
Attorney, Agent or Firm:
Yoshiaki Anzai