the complementary metal oxide semiconductor (CMOS) Fourier transform infrared rays (FTIR) accumulated completely -- a spectrum -- the total and Raman -- a spectrum -- the total

Japanese Patent JP6016216

B2

A Fourier Transform Infrared (FTIR) Spectrometer integrated in a CMOS technology on a Silicon-on-Insulator (SOI) wafer is disclosed. The present invention is fully integrated into a compact, miniaturized, low cost, CMOS fabrication compatible chip. The present invention may be operated in various infrared regions ranging from 1.1 mum to 15 mum or it can cover the full spectrum from 1.1 mum to 15 mum all at once. The CMOS-FTIR spectrometer disclosed herein has high spectral resolution, no movable parts, no lenses, is compact, not prone to damage in harsh external conditions and can be fabricated with a standard CMOS technology, allowing the mass production of FTIR spectrometers. The fully integrated CMOS-FTIR spectrometer is suitable for battery operation; any and all functionality can be integrated on a chip with standard CMOS technology. The disclosed invention for the FTIR spectrometer may also be adapted for a CMOS-Raman spectrometer.

Dattner, Jonathan
Edited-Pecht Orly

JP2013553751A

October 26, 2016

February 14, 2012

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Lux Max Technology Corporation

G01J3/45; G01J3/42; G01J3/44

JP2009537871A
JP2010185966A

US20070077595
WO2009073403A1
WO2010099104A2

Florjanczyk M , et.al.,"Multiaperture planar waveguide spectrometer formed by arrayed Mach-Zehnder interferometers",OPTICS EXPRESS,2007年12月24日,Vol. 15, No. 26,p.18176-18189
Soref R,"Towards Silicon-based Longwave Integrated Optoelectronics (LIO)",Proc. of SPIE,2008年 1月,Vol. 6898,p.689809-1 - 689809-13

Yuzo Yamazaki
Toshiaki Akamatsu
Ono Wataru
Okuko Masako
Tadao Naito
Takeko Miko
Chihiro Imai
Kei Kiuchi

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