The constituent for organic hard mask layer formation for lithography containing polymer including acryl amide structure

Japanese Patent JP5988050

B2

Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or C1-5 alkoxymethyl groups; and a solvent (C), wherein an organic hard mask layer obtained from the composition for forming an organic hard mask layer is used at the lowest layer in a lithography process using a multi-layer film, wherein R1 to R4 have the same definition as ones in the specification.

JP2570730	PROBLEM TO BE SOLVED: To form a pattern
JP2502564	INDUSTRIAL APPLICABILITY: Method for forming resist pattern
WO/2020/027069	ORIGINAL PLATE FOR ON-PRESS DEVELOPING-TYPE PLANOGRAPHIC PRINTING PLATE, PLANOGRAPHIC PRINTING PLATE PRODUCTION METHOD, AND PLANOGRAPHIC PRINTING METHOD

Someya Yasunobu
Usui Yuki
Masakazu Kato
Tetsuya Shinshiro
Keisuke Hashimoto
Ryo Ezawa

JP2013516350A

September 07, 2016

May 18, 2012

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Nissan Chemical Industry Co., Ltd.

G03F7/11; G03F7/26

JPH1048833A	1998-02-20
JP2002539282A	2002-11-19
JP2001505234A	2001-04-17
JPH10239837A	1998-09-11
JPH1048833A	1998-02-20
JP2002539282A	2002-11-19

WO2011074433A1	2011-06-23
WO2009128513A1	2009-10-22
WO2011074433A1	2011-06-23

Calyx
Miyazaki Yoshio
Tsutomu Kato
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