Title:
A constituent for silicon content resist lower layer film formation, and a pattern formation method
Document Type and Number:
Japanese Patent JP6114157
Kind Code:
B2
Abstract:
The present invention provides a composition for forming a silicon-containing resist under layer film comprises a silicon-containing compound (A 1 ) which is obtained by hydrolysis, condensation or hydrolysiscondensation of a silicon compound (A-1) containing one or more compounds represented by the following general formula (1),
wherein R represents an organic group having 1 to 6 carbon atoms, R a , R b and R c each represents a substituted or unsubstituted monovalent organic group having 1 to 30 carbon atoms, w=0 or 1, x=0, 1, 2 or 3, y=0, 1 or 2, z=0, 1, 2 or 3; when w=0, 5§x+z§1, and the case where (x, z)=(1, 1), (3, 0) or (0, 3) are not included; and when w=1, 7§x+y+z§1, and the case where (x, y, z)=(1, 1, 1) is not included. There can be provided a composition for forming a silicon-containing resist under layer film which is to form a resist under layer film with extremely less number of coating defects, and excellent in adhesiveness in fine pattern and etching selectivity.
Inventors:
Tsutomu Ogiwara
Yusuke Mitanijima
Yusuke Mitanijima
Application Number:
JP2013207169A
Publication Date:
April 12, 2017
Filing Date:
October 02, 2013
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/11; C08G77/14; G03F7/075; H01L21/027
Domestic Patent References:
| JP2001040094A | ||||
| JP2004191386A | ||||
| JP2007178974A | ||||
| JP2004157469A | ||||
| JP2000356854A | ||||
| JP7181688A |
Attorney, Agent or Firm:
Mikio Yoshimiya