Title:
A contact pad and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP5985495
Kind Code:
B2
Abstract:
The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, which is formed over the adhesion layer; and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer is formed using an evaporation process.
Inventors:
Miechowski, Van
Agarwal, anant
Gargainus, jason
Hagretoner, Helmut
Agarwal, anant
Gargainus, jason
Hagretoner, Helmut
Application Number:
JP2013538805A
Publication Date:
September 06, 2016
Filing Date:
November 07, 2011
Export Citation:
Assignee:
CREE INC.
International Classes:
H01L29/47; H01L21/28; H01L21/285; H01L21/329; H01L29/161; H01L29/20; H01L29/861; H01L29/868; H01L29/872
Domestic Patent References:
| JP4177764A | ||||
| JP10135518A | ||||
| JP63051630A | ||||
| JP58046631A | ||||
| JP2005277240A | ||||
| JP2003069048A | ||||
| JP2009081177A | ||||
| JP61035517A |
Attorney, Agent or Firm:
Shinjiro Ono
Yasushi Kobayashi
Shigeo Takeuchi
Osamu Yamamoto
Omaki Ayako
Yasushi Kobayashi
Shigeo Takeuchi
Osamu Yamamoto
Omaki Ayako