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Title:
A copper compound, materials for thin film formation, and a manufacturing method of a thin film
Document Type and Number:
Japanese Patent JP6278827
Kind Code:
B2
Abstract:
This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R 1 to R 3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R 1 and R 2 are a methyl group, R 3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R 1 is a methyl group and R 2 is an ethyl group, R 3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

Inventors:
Yoshiharu Tomoharu
Totsu Masaki
Atsushi Sakurai
Akihiro Nishida
Makoto Okabe
Application Number:
JP2014100611A
Publication Date:
February 14, 2018
Filing Date:
May 14, 2014
Export Citation:
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Assignee:
ADEKA CORPORATION
International Classes:
C07C215/08; C07F1/08; C23C16/18; H01L21/28; H01L21/285
Domestic Patent References:
JP2008537947A
Foreign References:
US20130330473
US6822107
Other References:
BECKER, Ralf et al.,A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propox,Chemical Vapor Deposition,2003年,9(3),149-156
Attorney, Agent or Firm:
Michiharu Soga
Kajinami order
Kazuhiro Oyaku
Satoshi Iino