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Title:
対流冷却構造を有する結晶成長炉
Document Type and Number:
Japanese Patent JP4986964
Kind Code:
B2
Abstract:
A crystal-growing furnace with a convectional cooling structure includes a furnace body, a heating room, and at least one heater. The heating room is accommodated in the furnace body, and includes an upper partition, a plurality of side partitions, and a lower partition. The upper partition is provided with an upper opening, and the lower partition with a central opening. Further, the heating room is provided with an upper door, a lower door, an upper driver, and a lower driver. When silicon slurry is to be cooled and solidified, cooling gaseous stream flows into a lower portion of the heating room through the central opening. Then the upper opening is opened by the upper door which is driven by the upper driver, so that heated gaseous stream is discharged from the upper opening and flows downward along furnace inside wall, and flows back to the heating room from the central opening. Therefore, an automatic convectional circulating cooling flow field can be formed, such that the silicon slurry can be cooled quickly with time saved and production efficiency improved. Further, in the process of cooling and crystal growing from the silicon slurry, solidification and crystallization start from bottom to upward of the silicon slurry, such that inner stress and corner fracture may not be occurred to the silicon crystal ingots, and that a desirable quality of the silicon crystal ingots can be obtained.

Inventors:
Show-Jen Leu
Application Number:
JP2008250165A
Publication Date:
July 25, 2012
Filing Date:
September 29, 2008
Export Citation:
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Assignee:
Green Energy Technology Ink.
International Classes:
C30B28/06; F27B17/00; F27D5/00; F27D9/00; F27D11/02; C01B33/02
Domestic Patent References:
JP63049694A
JP11310496A
JP5147918A
JP2001048696A
JP2003165716A
JP2000319094A
JP2005121308A
JP11079880A
JP56129696A
Foreign References:
US20070283882
Attorney, Agent or Firm:
Hiroe Associates Patent Office