Title:
Current switching device with IGCT
Document Type and Number:
Japanese Patent JP6324185
Kind Code:
B2
Abstract:
A current switching device (8) comprises an integrated gate-commutated thyristor (10) with an anode (14), a cathode (16), and a gate (18), wherein a current between the anode and the cathode is interruptible by applying a switch-off voltage (40) to the gate; and a gate unit (12) for generating the switch-off voltage (40). The gate unit (12) and a connection of the gate unit to the gate (18) establish a gate circuit (38) having a stray impedance. The gate unit (12) is adapted for generating a spiked switch-off voltage (40) with a maximum (44) above a breakdown voltage ( VGR MAX ) between the cathode and the gate, such that the switch-off voltage at the gate stays below the breakdown voltage ( VGR MAX ) due to the stray impedance of the gate circuit (38).
Inventors:
Tobias Vixtreme
Application Number:
JP2014087104A
Publication Date:
May 16, 2018
Filing Date:
April 21, 2014
Export Citation:
Assignee:
ABB Technology AG
International Classes:
H02M1/08
Domestic Patent References:
| JP6348155A | ||||
| JP6292765A | ||||
| JP5775032A | ||||
| JP200186733A |
Foreign References:
| US6426666 | ||||
| EP1235334A2 |
Attorney, Agent or Firm:
Einzel Felix-Reinhard
Takuya Kuno
Takuya Kuno