Title:
A device condition setting method of a charged particle beam device, and a charged particle beam device
Document Type and Number:
Japanese Patent JP6255448
Kind Code:
B2
Abstract:
The purpose of the present invention is to provide a method for pattern measurement and a charged particle radiation device, whereby patterns formed by DSA techniques can be measured and inspected with high accuracy. According to an aspect for achieving the aforementioned purpose, there is proposed hereinbelow a method for pattern measurement wherein a high-molecular weight compound employed in a self-assembled lithographic technique is irradiated with charged particles whereby, of a plurality of polymers forming the high-molecular weight compound, a specific polymer is induced to contract significantly with respect to another polymer, and on the basis of a signal obtained through charged electron beam scanning of a region containing the other polymer, the dimensions between a plurality of edges of the other polymer are measured; or a charged particle radiation device for accomplishing the measurement in question.
Inventors:
Makoto Suzuki
Satoshi Yamaguchi
Sakai total
Miki Izawa
Satoshi Takada
Kazuhisa Hasumi
Masami Ikoda
Satoshi Yamaguchi
Sakai total
Miki Izawa
Satoshi Takada
Kazuhisa Hasumi
Masami Ikoda
Application Number:
JP2016120354A
Publication Date:
December 27, 2017
Filing Date:
June 17, 2016
Export Citation:
Assignee:
Hitachi High-Technologies Corporation
International Classes:
H01J37/22; G01B15/04; H01J37/28
Domestic Patent References:
| JP2010092949A | ||||
| JP61135458U | ||||
| JP3190046A | ||||
| JP2008203109A |
Other References:
生井準人ら他5名,自己組織化材料の半導体微細パターニングへの応用,JSR TECHNICAL REVIEW,2012年,No.119,p.7-12
Attorney, Agent or Firm:
Shigemi Iwasaki