Title:
多結晶半導体材料、特にシリコンを取得する装置及び該装置内の温度を制御するための方法
Document Type and Number:
Japanese Patent JP5681197
Kind Code:
B2
Abstract:
A device for obtaining multicrystalline silicon, including: at least one crucible made of quartz for the silicon, removably housed in a cup-shaped graphite container; a fluid-tight openable casing; a top induction coil, set facing, with interposition of a graphite plate, the crucible, a lateral induction coil, set around a side wall of the graphite container, and a bottom induction coil, set facing a bottom wall of the graphite container and vertically mobile for varying the distance from the bottom wall; and first means for a.c. electrical supply of the induction coils separately from one another, and second means for supply of a coolant within respective hollow turns of the induction coils; the bottom induction coil includes four spiral windings, arranged alongside one another; electrical switching means enable in use selective connection of the four windings to one another according to different configurations.
Inventors:
ドゥギエロ，ファブリツィオ
フォルザン，ミケーレ
チスカート，ダリオ
セザノ，マリオリノ
クリヴィエッロ，ファブリツィオ
ベキニ，ロベルト
フォルザン，ミケーレ
チスカート，ダリオ
セザノ，マリオリノ
クリヴィエッロ，ファブリツィオ
ベキニ，ロベルト
Application Number:
JP2012534788A
Publication Date:
March 04, 2015
Filing Date:
October 20, 2010
Export Citation:
Assignee:
サエト ソシエタ ペル アチオニ
International Classes:
C30B29/06; C01B33/02; H01L51/44
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Shinsuke Onuki
Tadahiko Ito
Shinsuke Onuki
Previous Patent: 稀薄分布のエレメントアレイを有するアンテナ
Next Patent: TREATMENT OF SLUDGE GENERATED IN FILTRATION PLANT
Next Patent: TREATMENT OF SLUDGE GENERATED IN FILTRATION PLANT