Title:
SINGLE CRYSTAL SEMICONDUCTOR ON SUBSTRATE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3207098
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form silicon carbide of large diameter by a method wherein a single crystal layer in a specific range of thickness is formed by making a first element react chemically on an initial single crystal layer of second element which is in a specific range of initial thickness and on a dielectric layer.
SOLUTION: A single crystal layer as thick as 200 to 20,000&angst is formed through such a manner that a first element is made to react chemically on an initial single crystal layer of second element located on a dielectric layer. It is important that the second element layer has an initial thickness of 100 to 10,000&angst . First, a comparatively thin layer 3 of crystal material is formed on a dielectric layer 2. Then, the layer 3 is turned into a compound single crystal reacting on a second different element. At this point, carbon is deposited as a second element 4. Germanium, cobalt, titanium, or tantalum can be used as the second element 4 besides carbon.
Inventors:
Potchefstrom University for Christian Higher Education
Stephen McConnell Gates
Fernando Jose Garin
Subramanian Suricante Swara Yell
Yasutoshi Yanagisawa
Stephen McConnell Gates
Fernando Jose Garin
Subramanian Suricante Swara Yell
Yasutoshi Yanagisawa
Application Number:
JP797696A
Publication Date:
September 10, 2001
Filing Date:
January 22, 1996
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L21/02; H01L21/04; H01L21/20; H01L27/12; H01L31/10; H01L31/18; H01L33/00; H01S5/00; H01S5/323; (IPC1-7): H01L21/20; H01L27/12
Domestic Patent References:
| JP62286283A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi (1 person outside)