Title:
クロム層を含むスイッチを持つデバイス、及びクロム層をスパッタリングでデポジットする方法
Document Type and Number:
Japanese Patent JPH09512390
Kind Code:
A
Abstract:
A device having a switch comprises a chromium layer and an adjacent semiconductor layer. The fraction of voids in the chromium layer is less than 10%, preferably less than 2%. The chromium layer in the device comprises traces of neon with a concentration of less than 0.1 at. %. Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.
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Inventors:
フィンク テニス ヨハネス
ワルラーフェ ウィレム
ワルラーフェ ウィレム
Application Number:
JP52478996A
Publication Date:
December 09, 1997
Filing Date:
January 29, 1996
Export Citation:
Assignee:
フィリップス エレクトロニクス ネムローゼ フェンノートシャップ
International Classes:
C23C14/16; C23C14/18; C23C14/54; H01L21/28; C23C14/34; H01L21/283; H01L21/285; H01L21/3205; H01L23/52; H01L29/45; (IPC1-7): H01L21/285; C23C14/34; H01L21/285; H01L21/3205
Attorney, Agent or Firm:
杉村 暁秀 （外６名）