TARGET FOR SPUTTERING AND PRODUCTION THEREOF

Title:

TARGET FOR SPUTTERING AND PRODUCTION THEREOF

Document Type and Number:

Japanese Patent JPH0551732

Kind Code:

A

Abstract:

PURPOSE: To provide a Ti-W target for sputtering having a uniform alloy phase and the production method therefor.

CONSTITUTION: A Ti-W mixture contg. 5-30wt.% Ti is melted by heating by an electronic or plasmatic bombardment method and the resulting melt is cast to obtain a W alloy contg. 5-30 wt.% Ti. This alloy may be heat-treated by hot isostatic pressing(HIP). The microscopic uniformity of a target made of the W alloy is enhanced, high purity can be ensured, the generation of particles is suppressed at the time of sputtering and the yield of semiconductor devices can be considerably enhanced. When the alloy is heat-treated by HIP, fine casting defects (pores) in the Ti-W alloy phase vanish and the uniformity is further enhanced.

Inventors:

NODA FUMIO
FUKUI SOICHI
SUGAMURA KUNIO
ITO IKUO

Application Number:

JP5515491A

Publication Date:

March 02, 1993

Filing Date:

March 19, 1991

Export Citation:

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Assignee:

MITSUBISHI MATERIALS CORP

International Classes:

C22C27/04; C23C14/34; (IPC1-7): C22C27/04; C23C14/34

Attorney, Agent or Firm:

Masatake Shiga (2 outside)

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