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Title:
ION IMPLANTATION DEVICE
Document Type and Number:
Japanese Patent JPH0613019
Kind Code:
A
Abstract:

PURPOSE: To provide an ion implantation device that can prevent contamination of a material to be processed such as a semiconductor wafer.

CONSTITUTION: A Faraday cup 2 is provided on the side of the front surface of a wafer W on a rotational disc 17, and a plasma generating part 4 is provided on the outside of the Faraday cup 2. An opening part 41 is formed in a plasma generating chamber 31 while an opening part 42 is formed on the tubular wall part of the Faraday cup 2, to form a plasma outlet 4 out of the opening parts. A line-of-sight region S of the outlet 4 is provided so that it can be removed from a wafer W. Even when the surface of the wafer W is charged with positive charges by the irradiation of an ion beam, electrons are extracted from the plasma in the plasma generating chamber 31, to neutralize the positive charges. Even when metal particles jumps out of the plasma outlet 4 from a filament 32 or from the plasma generating chamber 31, the metal particles do not directly collide with the wafer W, since the region S is outside of the wafer W.


Inventors:
TOMOYOSHI TSUTOMU
KIKUCHI SHUJI
TOMOYASU MASAYUKI
Application Number:
JP19647592A
Publication Date:
January 21, 1994
Filing Date:
June 29, 1992
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
H01J37/317; H01L21/265; (IPC1-7): H01J37/317; H01L21/265
Attorney, Agent or Firm:
Toshio Inoue



 
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