Title:
表示装置
Document Type and Number:
Japanese Patent JP7389205
Kind Code:
B2
Abstract:
The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer.
Inventors:
Shunpei Yamazaki
Takayuki Abe
Nagaaki Shishido
Takayuki Abe
Nagaaki Shishido
Application Number:
JP2022176137A
Publication Date:
November 29, 2023
Filing Date:
November 02, 2022
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; G09F9/30; H01L29/786; H10K59/12
Domestic Patent References:
| JP2008089915A | ||||
| JP2007529119A | ||||
| JP2003108034A |
Foreign References:
| US20050275038 |
Previous Patent: Apparatus and method for calibrating a shear tester
Next Patent: Broadcast receiving device and content protection processing method
Next Patent: Broadcast receiving device and content protection processing method