Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0574960
Kind Code:
A
Abstract:
PURPOSE: To form an insulating interlayer film having low dielectric constant, excellent close contact and no problem of heat flow.
CONSTITUTION: First interconnection is formed on a substrate, and an insulating interlayer film is formed on the substrate including the first interconnection by a plasma polymerizing method by using compound gas or the compound gas and hydrogen as reaction gases, the compound gas represented by a general formula (1): CXFYHY (1) (where X is integer of 1-5, Y is integer of 1-10 and Z is integer of 0-5.).
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Inventors:
ABE NAOMICHI
KUDO HIROSHI
KUDO HIROSHI
Application Number:
JP2800092A
Publication Date:
March 26, 1993
Filing Date:
February 14, 1992
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C23C16/50; H01L21/768; H01L23/522; (IPC1-7): C23C16/50; H01L21/90
Attorney, Agent or Firm:
Aoki Akira (2 outside)