Title:
A dry chemistry process for manufacturing a semiconductor device to which channel mobility was made to increase
Document Type and Number:
Japanese Patent JP6255071
Kind Code:
B2
Abstract:
Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
Inventors:
Dahl, Salit
Chen, Lin
Liu, Say-Hyun
Angar Kumar, Angarwal
Palmer, John Williams
Maki, Eric
Gargainus, jason
Lichten Werner, Daniel Jenner
Chen, Lin
Liu, Say-Hyun
Angar Kumar, Angarwal
Palmer, John Williams
Maki, Eric
Gargainus, jason
Lichten Werner, Daniel Jenner
Application Number:
JP2016165443A
Publication Date:
December 27, 2017
Filing Date:
August 26, 2016
Export Citation:
Assignee:
CREE INC.
International Classes:
H01L21/336; H01L21/283; H01L21/316; H01L29/12; H01L29/739; H01L29/78
Domestic Patent References:
| JP2002524860A | ||||
| JP11135774A | ||||
| JP2000106428A | ||||
| JP2007194652A | ||||
| JP2008530769A | ||||
| JP2000294554A | ||||
| JP2001189312A | ||||
| JP2002184973A |
Attorney, Agent or Firm:
Shinjiro Ono
Yasushi Kobayashi
Shigeo Takeuchi
Osamu Yamamoto
Omaki Ayako
Yasushi Kobayashi
Shigeo Takeuchi
Osamu Yamamoto
Omaki Ayako
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