Title:
透過率を調整することができる埋込減衰型位相シフトマスク
Document Type and Number:
Japanese Patent JP2007535694
Kind Code:
A
Abstract:
The attenuation and phase shift properties of an embedded attenuated phase shift mask (EAPSM) may be independently selected. After or during plowing of regions of an embedded phase shift layer, exposed regions of a substrate are etched to a predetermined depth. Additional regions of the embedded phase sift layer are then exposed and trimmed to a predetermined thickness for providing the desired amount of attenuation, with the final etched depth of the substrate compensating for the change of relative phase shift caused by trimming of the phase shift layer. A matrix test device having a plurality of cells with different levels of attenuation and/or phase shift may then be fabricated on a single EAPSM blank.
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Inventors:
Xiao, Quan Ming
Application Number:
JP2007504104A
Publication Date:
December 06, 2007
Filing Date:
March 17, 2005
Export Citation:
Assignee:
PHOTRONICS, INC.
International Classes:
G03F1/08; G01F9/00; G03C5/00; G03F1/00; G03F7/20; G03F9/00; G06F17/50
Foreign References:
| US6277528B1 | 2001-08-21 | |||
| US6261725B1 | 2001-07-17 | |||
| US6403267B1 | 2002-06-11 | |||
| US20020127881A1 | 2002-09-12 |
Attorney, Agent or Firm:
Michiharu Soga
Hidetoshi Furukawa
Suzuki Kenchi
Kajinami order
Hidetoshi Furukawa
Suzuki Kenchi
Kajinami order