Title:
【発明の名称】半導体装置用バイアス試験炉
Document Type and Number:
Japanese Patent JP3065007
Kind Code:
B2
Inventors:
Yukihiro Yoshikawa
Application Number:
JP34397697A
Publication Date:
July 12, 2000
Filing Date:
November 28, 1997
Export Citation:
Assignee:
NEC
International Classes:
G01R31/26; H01L21/66; (IPC1-7): G01R31/26; H01L21/66
Domestic Patent References:
| JP4151577A | ||||
| JP5209925A | ||||
| JP587876A |
Attorney, Agent or Firm:
Shiroyuki Hori