Title:
単結晶基板とその上に成長させた窒化ガリウム系化合物半導体結晶とから構成されるエピタキシャルウェハ
Document Type and Number:
Japanese Patent JP4002643
Kind Code:
B2
Inventors:
Tetsuro Sakurai
Mineo Okuyama
Tsuguo Fukuda
Mineo Okuyama
Tsuguo Fukuda
Application Number:
JP31051897A
Publication Date:
November 07, 2007
Filing Date:
November 12, 1997
Export Citation:
Assignee:
SHOWA DENKO K.K.
International Classes:
C30B29/38; H01L21/02; H01L21/20; H01L21/205; H01L33/32; H01S5/00; H01S5/323
Domestic Patent References:
| JP9307189A |
Other References:
M. Ito et al. ,Growth of perovskite-type oxides (RE,Sr)(Al,Ta)O3 as substrates for GaN epitaxial growth (RE=La,Nd),J. Cryst. Growth,NL,Elsevier Science B. V. ,2002年 2月,Vol. 235,pp. 277-282.
Attorney, Agent or Firm:
Takemichi Fukuda
Kenzo Fukuda
Shinichi Fukuda
Kenzo Fukuda
Shinichi Fukuda