Title:
FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JP2022139077
Kind Code:
A
Abstract:
To reduce channel resistance in a field effect transistor with a p-type deep layer.SOLUTION: A field effect transistor (10) includes a plurality of p-type deep layers (36). Each p-type deep layer protrudes downward from a body layer (34), extends intersecting with a trench (14) when a semiconductor substrate (12) is viewed from above, and is in contact with a gate insulating film (16) at a side surface and a bottom surface of the trench present below the body layer. Each p-type deep layer includes a low-concentration region (36a) and a high-concentration region (36b). Each low-concentration region is in contact with the body layer from below and is in contact with the gate insulating film at the side surface of the trench present below the body layer. Each high-concentration region is in contact with the corresponding low-concentration region from below.SELECTED DRAWING: Figure 4
Inventors:
TAKATANI HIDESHI
Application Number:
JP2021039305A
Publication Date:
September 26, 2022
Filing Date:
March 11, 2021
Export Citation:
Assignee:
DENSO CORP
International Classes:
H01L29/78; H01L29/06; H01L29/12
Attorney, Agent or Firm:
Patent Attorney Corporation Kaiyu International Patent Office