Title:
FILM DEPOSITION APPARATUS USING SILICON RAW MATERIAL
Document Type and Number:
Japanese Patent JP2017088916
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of enhancing the film deposition rate of a thin film layer (a barrier film) using the PECVD method to perform stable operation without enlarging the film deposition apparatus and increasing film deposition cost.SOLUTION: The film deposition apparatus for forming a thin film layer on a base material used as a sample includes a reaction chamber having a sample holding mechanism and an exhaust mechanism. The reaction chamber comprises: material supply means for mixing a silicon raw material with an oxidized gas; energy supply means for oxidizing the silicon raw material by adding energy to form a thin film layer; and unreacted raw material collection means for decomposing an unreacted raw material in the exhaust mechanism or adsorbing the unreacted raw material on the decomposed product. The silicon raw material is at least one organic compound including silicon, oxygen and carbon, and the amount of supply is controlled so that the molecular number A of the total amount of oxide formed when one molecule of the silicon raw material is completely stoichiometrically oxidized and the number B of silicon atoms included in the silicon raw material satisfy the relation of (A-B)/B≤6.75.SELECTED DRAWING: Figure 1
Inventors:
NARAI SATORU
KAWAKAMI NOBUYUKI
JIKO NORIHIRO
KAWAKAMI NOBUYUKI
JIKO NORIHIRO
Application Number:
JP2015216859A
Publication Date:
May 25, 2017
Filing Date:
November 04, 2015
Export Citation:
Assignee:
KOBE STEEL LTD
International Classes:
C23C16/44; C23C16/505; H01L21/31
Domestic Patent References:
| JP2009540124A | 2009-11-19 | |||
| JP2002317273A | 2002-10-31 | |||
| JP2012012628A | 2012-01-19 | |||
| JP2012021201A | 2012-02-02 | |||
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Foreign References:
| WO2014152908A1 | 2014-09-25 |
Attorney, Agent or Firm:
Patent business corporation glory patent office