Title:
【発明の名称】横方向エミッタ切替サイリスタ素子及び縦方向エミッタ切替サイリスタ素子
Document Type and Number:
Japanese Patent JP3243792
Kind Code:
B2
Abstract:
PCT No. PCT/GB95/01072 Sec. 371 Date Apr. 8, 1997 Sec. 102(e) Date Apr. 8, 1997 PCT Filed May 11, 1995 PCT Pub. No. WO96/36076 PCT Pub. Date Nov. 14, 1996The operating characteristics of emitter-switched thyristors (1) are improved by the addition of a floating ohmic contact (14) over adjacent regions of n+ and p+ type (15,16). In a lateral device, the floating ohmic contact (14) and the adjacent regions of n+ and p+ type (15,16) are provided between the anode region (4) and the cathode region (8,9,10). The device has enhanced turn-on characteristics with a high breakdown voltage and high current density capabilities.
Inventors:
Amaratunga, Gehan Anil Joseph
Chain way
Naoki Kumagai
Chain way
Naoki Kumagai
Application Number:
JP53384596A
Publication Date:
January 07, 2002
Filing Date:
May 11, 1995
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/74; H01L29/745; H01L29/749; (IPC1-7): H01L29/749
Domestic Patent References:
| JP870116A | ||||
| JP6232392A | ||||
| JP5335555A | ||||
| JP5335554A | ||||
| JP5235332A | ||||
| JP9508497A |
Other References:
【文献】米国特許5294816(US,A)
【文献】米国特許5293054(US,A)
【文献】米国特許5293054(US,A)
Attorney, Agent or Firm:
Yoshikazu Tani (1 person outside)
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