Title:
【発明の名称】キャパシタ絶縁膜の形成方法
Document Type and Number:
Japanese Patent JP3325274
Kind Code:
B2
Abstract:
PURPOSE:To obtain a capacitor insulating film whose electric characteristic is satisfactory by a method wherein reaction gases SiH2Cl2 and NH3 are reacted at a specific temperature, an extremely thin LPCVD-Si3N4 film is formed, an annealing treatment is executed for a prescribed time in an H2+O2 atmosphere at a specific temperature and an upper-part oxide film is formed. CONSTITUTION:A wafer where a lower-part oxide film by a spontaneous oxide film has been formed on the surface is reacted, inside an LPCVD furnace, at a lower-limit temperature of 550 to 600 deg.C at which the reaction of reaction gases SiH2Cl2 and NH3 progresses; an LPCVD-Si3N4 film is formed. After that, an annealing treatment is executed for 30 minutes in an (H2+O2) atmosphere at 850 to 900 deg.C which is high as compared with the reaction temperature; an upper-part oxide film is formed. Thereby, it is possible to manufacture a capacitor insulating film in which the flatness of the surface and the oxidation- resistant property of an extremely thin film are enhanced, whose electric characteristic is satisfactory and whose effective film thickness toxeff is at a level of 50Angstrom .
More Like This:
| JPS60136322 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
| WO/2021/059579 | SEMICONDUCTOR DEVICE |
| JP3035938 | [Title of Invention] Semiconductor Memory |
Inventors:
Nobuhiko Inoue
Masaki Yoshimaru
Masaki Yoshimaru
Application Number:
JP40466990A
Publication Date:
September 17, 2002
Filing Date:
December 05, 1990
Export Citation:
Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
H01L27/04; H01L21/318; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L21/318; H01L21/822; H01L21/8242; H01L27/04; H01L27/108
Domestic Patent References:
| JP2273963A | ||||
| JP2186632A |
Attorney, Agent or Firm:
Kenji Ohnishi