Title:
誘電体薄膜の形成方法
Document Type and Number:
Japanese Patent JP4110952
Kind Code:
B2
Abstract:
A method for forming a dielectric thin film includes a film deposition step of spraying a material solution onto a heated substrate under a reduced pressure by a two-fluid technique using an inert gas to deposit a thin film. The material solution is supplied at a rate that is greater than the vaporization rate of the solvent in the film deposited on the substrate. The supply of the material solution is stopped and the solvent remaining in the film is vaporized remaining solvent. Then, the film is heat-treated in an oxidizing atmosphere. The substrate is heated to a temperature in the range of about 100° C. to about 300° C. Thus, a dielectric thin film having reliability can be formed even if the film thickness is small.
Inventors:
Koichi Nishida
Hiroshi Takeshima
Shibuya Mitsuki
Hiroshi Takeshima
Shibuya Mitsuki
Application Number:
JP2002349874A
Publication Date:
July 02, 2008
Filing Date:
December 02, 2002
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
C23C16/40; C23C4/12; C23C4/18; H01B19/00; H01G4/12; H01G13/00; H01L21/316; H01L21/8246; H01L27/105; H01L21/314
Domestic Patent References:
| JP6306181A | ||||
| JP11087747A | ||||
| JP8169708A | ||||
| JP11209876A | ||||
| JP10308388A | ||||
| JP9036108A | ||||
| JP3170674A |
Attorney, Agent or Firm:
Hitoshi Nishizawa