Title:
A formation method of a memory cell and a memory cell
Document Type and Number:
Japanese Patent JP6259835
Kind Code:
B2
Abstract:
Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.
Inventors:
Shuichiro Yasuda
Rock rain, noel
Sills, Scott E.
Ramas Wami, Drai Vishak Nirmal
Tao, Chiang
Rock rain, noel
Sills, Scott E.
Ramas Wami, Drai Vishak Nirmal
Tao, Chiang
Application Number:
JP2015552636A
Publication Date:
January 10, 2018
Filing Date:
December 11, 2013
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| JP2003347297A | ||||
| JP2011134909A | ||||
| JP2012523119A | ||||
| JP2010062247A | ||||
| JP2012064808A | ||||
| JP2013211411A | ||||
| JP2011187925A | ||||
| JP2013016529A | ||||
| JP2009146478A |
Foreign References:
| US20110297927 | ||||
| US20130001496 |
Attorney, Agent or Firm:
Yoshiyuki Osuga
Nomura Yasuhisa
Nomura Yasuhisa
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