Title:
A formation method of the two-dimensional doping pattern in a solar cell.
Document Type and Number:
Japanese Patent JP6031112
Kind Code:
B2
Abstract:
An improved method of fabricating an interdigitated back contact (IBC) solar cell is disclosed. A first mask is used to perform a patterned ion implantation of n-type dopant to create the back surface field. A second mask is then used to create the p-type emitter on the same surface. The second mask may be aligned to the n-type implant, and may be used in a plurality of orientations to create the desired p-type emitter. In some embodiments, a p-type blanket implant is performed as well. In some embodiments, a doping gradient is created.
Inventors:
John w graph
Benjamin B. Riordon
Nicholas Pty Bateman
Joseph Sea Olson
Benjamin B. Riordon
Nicholas Pty Bateman
Joseph Sea Olson
Application Number:
JP2014535769A
Publication Date:
November 24, 2016
Filing Date:
October 08, 2012
Export Citation:
Assignee:
Varian Semiconductor Equipment Associates, Inc.
International Classes:
H01L31/068; H01L31/18
Domestic Patent References:
| JP2010519731A | ||||
| JP201228742A |
Foreign References:
| WO2011049950A1 | ||||
| WO2011019828A2 |
Attorney, Agent or Firm:
Kenji Sugimura
Hiroshi Ikeda
Toshio Fukui
Hiroshi Ikeda
Toshio Fukui