Title:
基板の放射線処理のシステムのためのガスフロー装置
Document Type and Number:
Japanese Patent JP6492089
Kind Code:
B2
Abstract:
A system for the radiation treatment of substrates, which includes at least one radiation source above the substrate holders in a chamber, which holders are to be equipped with substrates that are to be treated, and the chamber has means for maintaining a gas flow in the chamber, having at least one gas inlet and at least one gas outlet, characterized in that the at least one gas inlet is situated in the vicinity of the substrate holders so that gas flowing in by means of the at least one gas inlet first flows around the substrate holders before either exiting the chamber directly via the gas outlet or exiting after flowing around the at least one radiation source.
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Inventors:
Ribeiro Carlos
Application Number:
JP2016543331A
Publication Date:
March 27, 2019
Filing Date:
September 05, 2014
Export Citation:
Assignee:
Oerlikon Surface Solutions AG, Pfefikon
International Classes:
B29C35/08; B05C9/14; F26B3/30; F26B9/06; H01L21/027
Domestic Patent References:
| JP60191038A |
Attorney, Agent or Firm:
Hideki Imai
Fujita Akira
Takashi Matsumoto
Fujita Akira
Takashi Matsumoto