Title:
プラズマ反応用ガス及びその製造方法
Document Type and Number:
Japanese Patent JP4492764
Kind Code:
B2
Abstract:
A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.
More Like This:
| JP4744435 | Semiconductor matching aid |
| JP3951003 | PLASMA TREATING DEVICE AND METHOD THEREFOR |
| JPS5827983 | DRY ETCHING METHOD |
Inventors:
Toshida Hirayama
Toshiro Yamada
Tatsuya Sugimoto
Mitsuru Sugawara
Toshiro Yamada
Tatsuya Sugimoto
Mitsuru Sugawara
Application Number:
JP14356299A
Publication Date:
June 30, 2010
Filing Date:
May 24, 1999
Export Citation:
Assignee:
Zeon Corporation
International Classes:
H01L21/302; H01L21/3065; C07C17/20; C07C17/38; C07C17/383; C07C17/389; C07C23/08; H01L21/205; H01L21/311; H01L21/312; H01L21/3213
Domestic Patent References:
| JP9095458A | ||||
| JP10506107A | ||||
| JP5092119A | ||||
| JP63123417A | ||||
| JP10189553A |