Title:
高熱伝導性ダイヤモンド焼結体とその製造方法
Document Type and Number:
Japanese Patent JP4251986
Kind Code:
B2
Abstract:
A diamond heat sink for mounting a semiconductor chip, in which a surface finished sintered compact is used as a substrate and at least one pair of two opposite faces are coated with a metal film, the sintered compact being a high thermal conductivity diamond sintered compact comprising 60 vol.% to 90 vol.% of diamond grains on the whole sintered compact basis and the balance of substantially copper, which is substantially free from pores inside and has a diamond grain size distribution peak in a range of from 5 µm to 100 µm, at least two of the diamond grains constructing the sintered compact being directly bonded with each other, the copper forming the sintered compact substantially not being oxidized and the quantity of oxygen in the sintered compact being at most 0.025 weight %.
Inventors:
Katsuhito Yoshida
Hideaki Morikami
Takahiro Awaji
Tetsuo Nakai
Hideaki Morikami
Takahiro Awaji
Tetsuo Nakai
Application Number:
JP2003542664A
Publication Date:
April 08, 2009
Filing Date:
October 16, 2002
Export Citation:
Assignee:
Sumitomo Electric Hardmetal Corp.
International Classes:
C22C26/00; B22F3/24; C04B35/52; C04B35/645; C22C1/05; C22C1/10; H01L23/373
Domestic Patent References:
| JP52134890A | ||||
| JP9209058A |
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Nobuo Arakawa
Chigashi Kubota
Toshiko Hiraishi
Ryoichi Hagiwara
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Nobuo Arakawa
Chigashi Kubota
Toshiko Hiraishi
Ryoichi Hagiwara