Title:
HIGH FREQUENCY AMPLIFIER
Document Type and Number:
Japanese Patent JP2023172544
Kind Code:
A
Abstract:
To provide a high frequency amplifier that exhibits high gain and high output in microwave and milli-wave bands.SOLUTION: In a high frequency amplifier 1, a first FET 101 that is source-grounded amplifies a high frequency input signal. A second FED 102 that is gate-grounded is cascaded to the first FET 101 and outputs a high frequency output signal. A first transmission line 12a is connected between a drain terminal of the first FET 101 and a source terminal of the second FET 102. First stubs 20a, 20b are stubs having second transmission lines 21a, 21b that are connected to a gate terminal of the second FET 102 and having first capacitive elements 22a, 22b that are connected in series to the second transmission lines 21a, 21b, or open stubs.SELECTED DRAWING: Figure 1
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Inventors:
SUEMATSU EIJI
HARA SHINJI
HARA SHINJI
Application Number:
JP2022084436A
Publication Date:
December 06, 2023
Filing Date:
May 24, 2022
Export Citation:
Assignee:
TOKAI NATIONAL HIGHER EDUCATION & RES SYSTEM
International Classes:
H03F1/22; H03F3/195; H03F3/60
Attorney, Agent or Firm:
Kenki Morishita