Title:
高周波マイクロマシンスイッチ及びその製造方法
Document Type and Number:
Japanese Patent JP4465341
Kind Code:
B2
Abstract:
An RF MEMS switch (100) and a method for fabricating the same are disclosed, in which the RF MEMS device is down driven at a low voltage using a piezoelectric effect. The RF MEMS switch includes a substrate (101) provided with RF signal lines (102a,102b) and a cavity (103a), a cantilever (110) positioned on the cavity, having one end fixed to the substrate, and a contact pad (111) connecting the RF signal lines with the cantilever in contact with the RF signal lines when the cantilever is down driven.
Inventors:
Golden bell
Shou Asahi
Kim Dong
Entertainment
Lee Sou
Hong Yu Sawa
Lee Chang
Song Tora
Shou Asahi
Kim Dong
Entertainment
Lee Sou
Hong Yu Sawa
Lee Chang
Song Tora
Application Number:
JP2006298144A
Publication Date:
May 19, 2010
Filing Date:
November 01, 2006
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
H01H57/00; B81B3/00; B81C1/00; H01H49/00
Domestic Patent References:
| JP57115735A | ||||
| JP2001076605A | ||||
| JP2004327441A | ||||
| JP2005313276A | ||||
| JP10209517A |
Attorney, Agent or Firm:
Mikio Hatta
Yasuo Nara
Katsuyuki Utani
Ken Fujita
Masanori
Toshihiro Hasegawa
Yasuo Nara
Katsuyuki Utani
Ken Fujita
Masanori
Toshihiro Hasegawa