Title:
A high precision etching method of a substrate
Document Type and Number:
Japanese Patent JP6042498
Kind Code:
B2
Abstract:
A plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV.
Inventors:
Minmei One
Arok Langian
Peter L. G. Ventsuk
Arok Langian
Peter L. G. Ventsuk
Application Number:
JP2015138626A
Publication Date:
December 14, 2016
Filing Date:
July 10, 2015
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065
Domestic Patent References:
| JP2012084872A | ||||
| JP2007235135A | ||||
| JP2003151960A | ||||
| JP6151360A | ||||
| JP5267226A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Shinsuke Onuki
Tadahiko Ito
Shinsuke Onuki