Title:
【発明の名称】単結晶ウエハのホーニング加工方法
Document Type and Number:
Japanese Patent JP3382218
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a honing processing method for a single crystal wafer, which is capable of improving the processing yield and the yield in device process. SOLUTION: This method for honing processing comprises integrally arranging an ultraviolet curing film with a protective film on the main surface to be processed of a single crystal wafer, then heating the single crystal wafer to peel off the protective film, lowering the temperature of the single crystal wafer to a temperature lower than that at which the protective film is peeled, exposing the film to light, developing to form a fine hole pattern and finally subjecting to honing processing.
Inventors:
Yuji Inoue
Application Number:
JP2000322710A
Publication Date:
March 04, 2003
Filing Date:
October 23, 2000
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
B24B33/00; C30B29/30; H01L21/304; H01L41/18; H01L41/22; H01L41/335; (IPC1-7): C30B29/30; B24B33/00; H01L21/304; H01L41/18; H01L41/22
Domestic Patent References:
| JP1209811A | ||||
| JP5536812A |
Attorney, Agent or Firm:
Saichi Suyama