Title:
リン化インジウム基板
Document Type and Number:
Japanese Patent JP7158594
Kind Code:
B2
Abstract:
Provided is an indium phosphide substrate which has suppressed sharpness of a wafer edge when polishing is carried out from the back surface of the wafer by a method such as back lapping. An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 0° <θ ≤ 110° for all of the planes A where a distance from the main surface is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, and wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of from 200 to 350 µm.
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Inventors:
Shunsuke Oka
Kenji Suzuki
Hideaki Hayashi
Kenji Suzuki
Hideaki Hayashi
Application Number:
JP2021541682A
Publication Date:
October 21, 2022
Filing Date:
December 23, 2020
Export Citation:
Assignee:
JX Nippon Mining & Metals Co., Ltd.
International Classes:
C30B29/40; C30B33/00; H01L21/304
Domestic Patent References:
| JP2007266043A | ||||
| JP2006203071A | ||||
| JP7045568A |
Foreign References:
| WO2018198718A1 | ||||
| US20190198613 |
Attorney, Agent or Firm:
Axis International Patent Business Corporation
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