To provide a method for reducing generation of an insulating property defect by preventing a foreign substance from mixing into a film in forming an insulating layer without degrading an insulating property of the insulating layer nor impairing productivity, in sputtering by an insulator target formed of a plurality of oxides.
In a sputtering film formation method of an insulating layer using a target formed of at least two kinds of oxide, the target is preliminarily processed by discharging it at oxygen partial pressure higher than that in film formation. The target includes a mixture formed with, for instance, tantalum oxide and tin oxide. In an electroluminescent element formed by stacking, on an insulating substrate, a first electrode, a first insulating layer, a luminescent layer, and a second insulating layer and a second electrode in that order, at least one of the insulating layers is formed by the method.
COPYRIGHT: (C)2005,JPO&NCIPI
Shoichi Kawai
| JP4304364A | ||||
| JP2002270371A |
Daito Kato
Takashi Ito