An ion implantation method of an active layer, and an ion implantation method of the active layer of a thin film transistor

Title:

An ion implantation method of an active layer, and an ion implantation method of the active layer of a thin film transistor

Document Type and Number:

Japanese Patent JP6227340

Kind Code:

B2

Abstract:

Disclosed are an active layer ion implantation method and an active layer ion implantation method for thin-film transistor. The active layer ion implantation method comprises: applying a photoresist on the active layer; and implanting ions into the active layer through the photoresist.

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Inventors:

Horse Fortune Kiyoshi

Application Number:

JP2013189213A

Publication Date:

November 08, 2017

Filing Date:

September 12, 2013

Export Citation:

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Assignee:

BOE TECHNOLOGY GROUP CO.,LTD.

International Classes:

H01L21/336; H01L21/265; H01L29/786

Domestic Patent References:

JP2006054424A
JP64081316A
JP2007013055A
JP2004343034A
JP2009109610A
JP2004014622A
JP8250446A
JP11307780A
JP2010212670A
JP2004200651A
JP2010177668A

Attorney, Agent or Firm:

Yasuhiko Murayama
Takashi Watanabe
Shinya Mitsuhiro

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